The goal of the NCMN Nanofabrication Facility is to provide researchers with effective and efficient access to state-of-the-art nanofabrication equipment, expertise and training. Facility capabilities include high resolution patterning by electron-beam lithography (EBL) and photolithography, focused ion beams (FIB), reactive ion etching (RIE) process, wet chemical etching, as well as optical, stylus and eletronic characterization tools. Research collaborations are welcome from all university research groups as well as companies in Nebraska and elsewhere.
- Electron Beam Lithography System (EBL)
This EBL system is composed with a Zeiss Supra 40 field-emission scanning electron microscope and a Raith pattern generator. The Zeiss Supra 40 features electron beam up to 30KeV and provides capability of reproducibly achieving feature sizes as small as 20nm. It is also integrated with an laser interferometer-controlled wafer stage, which makes it possible to accomplish stitching application and multilayer EBL with overlay accuracy better than 50nm on a wide variety of substrates.
Energy of electrons: 0.1 - 30 keV
Beam size (resolution) ≤ 2.5 nm (≤ 1.6 nm)
Minimum pattern feature size ≤ 20 nm
Field stitching ≤ 50 nm (mean+2σ)
Laserstage travel range 50×50×25 mm (maximum wafer size)
- Laser Lithography System (DWL66 -FS)
- Mask Aligner (MJB-4)
The MJB4 mask aligner is an easy to use instrument for high-resolution photolithography. It is equipped with 405 nm exposure optics and lamps that allow a sub-micro exposure in vacuum contact. The achievable adjustment accuracy X, Y and Ɵ is below 1 µm. The versatile mask holder allows both round and square plates as masks, and the sample plate accommodates small and odd-shaped substrates. Masks and wafer/substrates to a total thickness of 9.00 mm can be processed. The system also features an infrared system for backside or buried layer alignment.
High resolution printing down to 0.8µm
Overlay accuracy to 1µm
Fast and accurate alignment with SUSS Single-field Microscope
Backside infrared alignment
Substrate size up to 100mm
Focused Ion Beam
- FEI Strata 200xp Focused-Ion Beam (FIB) Workstation
Featuring FEI's 30 kV focused Ga+ ion column, this focused ion beam (FIB) system is a versatile tool for performing work at the nanoscale. The most powerful capability of FIB is precisely controlled milling, which allows the freedom to manipulate the sample such as create a cross-section, remove material from selected region or create any possible shape in various substrates and materials as "carved in stone". Two complimentary gas injection systems (GIS) are equipped for enhanced etching of carbon containing materials such as polymers or for deposition of conductive and protective Pt layer. It is a superb general purpose tool for SEM imaging, high aspect ratio probe milling, grain structure analysis, circuit modification and failure analysis, defect characterization, fabrication of nano-patterns, and other related applications.
Single Ga Ion beam system
Accelerating energy range: 5 - 30 keV
Beam current range: 1 pA - 11.5 nA
Less than 20 nm minimum resolution in milling and patterning
Two complimentary gas injection systems (GIS) for Pt deposition and selective carbon milling
- Reactive Ion Etching System (Trion Minilock-Phantom III )
- Wet Etching Bench
- Stylus Profilometer (Dektak-XT)
- Film Thickness Measurement System (Filmetrics F40)
- Optic Microscope (Nikon L200N)
- Resistivity Measurement Stand (Lucas 302)
- Spinner (Laurell WS-400-6NPP)
- Hot Plate (Super Nuova 120)
- Oven (Thermo Scientific 3492M)
- UltraSonic Cleaner (Brason 2510)
Users of the facility:
The Facility is accessible to all qualified researchers at UNL, at other universities and in industrial and other laboratories on payment of the appropriate charges.
To access the NCMN Nanofabrication facility, all users must take orientation, cleanroom protocol, and safety training before they are allowed in the clean room. Users will also need to be trained and demonstrate proficiency on the tools they wish to use before they can operate themselves. Outside users may need to fulfill some additional requirements related to site security. Equipment time is generally scheduled through the Online Calendar on a first-come-first-served-basis.
Electron Beam Lithography System
SUSS MicroTec MJB4 Mask Aligner