Nanofabrication and Clean-Room Facility

NCMN Nanofabrication Central Facility provides state-of-the-art instrument for designing, fabricating, characterizing and testing of complex nano/micro-scale structures and devices.  All these advanced tool sets are housed within the 4000 sq. ft. clean room at the Voelte-Keegan Nanoscience Research Center. The facility opens to all UNL researchers as well as external (including private sector) researchers for carrying out their research projects in physics, chemistry, nano/microelectronics, MEMs/NEMs, nano-bio, and other related and interdisciplinary areas.  Staff support is available for training, process consultation, and collaboration on new process development.
Cleanroom: This is a certified class 10,000 (ISO-7) clean room, which spans over 4,000 sq. ft. area in total including 2500 sq. ft. work space.  There are four functional sectors based on the bay-and-chase configured framework, i.e. Etching, Metrology, Depositing, and Lithography.  The state-of-the-art equipment is allocated in different sectors accordingly.  Real time monitoring system (Harzardous gases, airborn particle concentration, temperature, air pressure, etc.) ensures the clean room running smoothly and safely. 

Instrumentation

Lithography

- Electron Beam Lithography System (EBL)
This EBL system is composed with a Zeiss Supra 40 field-emission scanning electron microscope and a Raith pattern generator. The Zeiss Supra 40 features electron beam up to 30KeV and provides capability of reproducibly achieving feature sizes as small as 20nm. It is also integrated with an laser interferometer-controlled wafer stage, which makes it possible to accomplish stitching application and multilayer EBL with overlay accuracy better than 50nm on a wide variety of substrates.
Equipment Specification:
Energy of electrons: 0.1 - 30 keV
Beam size (resolution) ≤ 2.5 nm (≤ 1.6 nm)
Minimum pattern feature size ≤ 20 nm
Field stitching ≤ 50 nm (mean+2σ)
Laserstage travel range 50×50×25 mm (maximum wafer size)

- Laser Lithography System (DWL66 -FS)

- Mask Aligner (MJB-4)
The MJB4 mask aligner is an easy to use instrument for high-resolution photolithography. It is equipped with 405 nm exposure optics and lamps that allow a sub-micro exposure in vacuum contact. The achievable adjustment accuracy X, Y and Ɵ is below 1 µm. The versatile mask holder allows both round and square plates as masks, and the sample plate accommodates small and odd-shaped substrates. Masks and wafer/substrates to a total thickness of 9.00 mm can be processed. The system also features an infrared system for backside or buried layer alignment.
Equipment Specification:
High resolution printing down to 0.8µm
Overlay accuracy to 1µm
Fast and accurate alignment with SUSS Single-field Microscope
Backside infrared alignment
Substrate size up to 100mm


Focused Ion Beam

- FEI Strata 200xp Focused-Ion Beam (FIB) Workstation
Featuring FEI's 30 kV focused Ga+ ion column, this focused ion beam (FIB) system is a versatile tool for performing work at the nanoscale. The most powerful capability of FIB is precisely controlled milling, which allows the freedom to manipulate the sample such as create a cross-section, remove material from selected region or create any possible shape in various substrates and materials as "carved in stone". Two complimentary gas injection systems (GIS) are equipped for enhanced etching of carbon containing materials such as polymers or for deposition of conductive and protective Pt layer. It is a superb general purpose tool for SEM imaging, high aspect ratio probe milling, grain structure analysis, circuit modification and failure analysis, defect characterization, fabrication of nano-patterns, and other related applications.
Equipment Specification:
Single Ga Ion beam system
Accelerating energy range: 5 - 30 keV
Beam current range: 1 pA - 11.5 nA
Less than 20 nm minimum resolution in milling and patterning
Two complimentary gas injection systems (GIS) for Pt deposition and selective carbon milling


Etching

- Trion Minilock-Phantom III Reactive Ion Etching (RIE) System
- DRIE Etching 


Metrology

- Stylus Profilometer (Dektak-XT)
- Film Thickness Measurement System (Filmetrics F40)
- Resistivity Measurement Stand (Lucas 302)


Users of the facility:

The Facility is accessible to all qualified researchers at UNL, at other universities and in industrial and other laboratories on payment of the appropriate charges.
To access the NCMN Nanofabrication facility, all users must take orientation, cleanroom protocol, and safety training before they are allowed in the clean room. Users will also need to be trained and demonstrate proficiency on the tools they wish to use before they can operate themselves. Outside users may need to fulfill some additional requirements related to site security. Equipment time is generally scheduled through the Online Calendar on a first-come-first-served-basis.

 

Contact:

Prof. Sy-Hwang Liou, Faculty Supervisor
Dr. Jiong Hua, Specialist

Location: 102B Nanoscience Research Center
University of Nebraska
Lincoln, NE 68588-0298
office/lab: (402) 472-3773
e-mail: jhua2@unl.edu
website: http://ncmn.unl.edu/nanofab/home

 

 

 

cleanroom

 

 

 

 

 

 

EBL

Electron Beam Lithography System

 

 

 

 

 

 

mask aligner

SUSS MicroTec MJB4 Mask Aligner

 

 

 

 

FIB

FIB Workstation