this page is under construction
Polarization-Enabled Electronic Phenomena
This IRG was evolved from the extremely successful SuperSeed Project "Polarization Coupled Memristive Behavior in Oxide Heterostructures" (Nov. 2014).
The IRG is aimed at exploring and exploiting FE polarization as a state variable that allows realization of polarization-controlled electronic, transport, and other functional properties of oxide, organic, and hybrid FE-based structures. This involves ferroelectrically induced resistive switching phenomena and the associated memristive behavior, FE modulation of electronic confinement at the hybrid FE/semiconductor and organic interfaces, as well as development of novel functional systems based on newly synthesized organic ferroelectrics where molecular interactions are responsible for macroscopic dipole ordering. These scientifically rich problems comprise the involvement of multiple degrees of freedom, the critical role of interfaces, and the interplay between physical and chemical properties at the nanoscale. They require comprehensive fundamental understanding and hold a lot of promise for technological innovations, including new paradigms for data storage and conceptually novel photovoltaic applications.
IRG 2 Research Areas:
Recent IRG 2 Research Highlights:
IRG 2 Researchers
(coordinator) PFM, CAFM
Langmuir-Blodgett, dielectric testing
Oxide sputtering, nanofab
Chem. synthesis, devices
Theory spin transport and oxide FE
Xiao Cheng Zeng
Theory organic FE